mitsubishi nch power mosfet FS10UMA-5A high-speed switching use sep. 2001 FS10UMA-5A outline drawing dimensions in mm to-220 mitsubishi nch power mosfet FS10UMA-5A high-speed switching use application crt display monitor, smps, etc. 250 20 10 30 10 65 C 55 ~ +150 C 55 ~ +150 2.0 v gs = 0v v ds = 0v l = 200 h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a w c c g v dss v gss i d i dm i da p d t ch t stg symbol maximum ratings (tc = 25 c) parameter conditions ratings unit 10v drive v dss ............................................................................... 250v r ds (on) (max) .............................................................. 0.52 ? i d ......................................................................................... 10a 10.5max. 4.5 1.3 3.6 3.2 16 12.5min. 3.8max. 1.0 0.8 2.54 2.54 4.5max. 0.5 2.6 7.0 ??? ? gate ? drain ? source ? drain ? ?? ? ?
mitsubishi nch power mosfet FS10UMA-5A high-speed switching use sep. 2001 v (br) dss i gss i dss v gs (th) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-c) v a ma v ? v s pf pf pf ns ns ns ns v c/w 250 2.0 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 1.5 0.1 1 4.0 0.52 2.60 2.0 1.92 electrical characteristics (tch = 25 c) drain-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v v gs = 20v, v ds = 0v v ds = 250v, v gs = 0v i d = 1ma, v ds = 10v i d = 5a, v gs = 10v i d = 5a, v gs = 10v i d = 5a, v ds = 10v v ds = 25v, v gs = 0v, f = 1mhz v dd = 150v, i d = 5a, v gs = 10v, r gen = r gs = 50 ? i s = 5a, v gs = 0v channel to case performance curves power dissipation derating curve case temperature t c ( c) power dissipation p d (w) maximum safe operating area drain-source voltage v ds (v) drain current i d (a) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) output characteristics (typical) drain current i d (a) drain-source voltage v ds (v) 0 20 40 60 80 100 0 200 50 100 150 10 C 1 7 10 0 5 7 2 3 10 1 5 7 2 3 5 7 2 3 10 1 357 2 10 2 10 3 357 7 235 22 0 2 4 6 8 10 0246810 t c = 25 c single pulse 100 s tw = 10 s 1ms dc p d = 65w v gs = 20v,10v,7v,6v,5v t c = 25 c pulse test 4v 4.5v 0 4 8 12 16 20 0 4 8 121620 v gs = 20v,10v,7v,6v p d = 65w t c = 25 c pulse test 4v 5v
mitsubishi nch power mosfet FS10UMA-5A high-speed switching use sep. 2001 on-state voltage vs. gate-source voltage (typical) gate-source voltage v gs (v) drain-source on-state voltage v ds (on) (v) on-state resistance vs. drain current (typical) drain current i d (a) drain-source on-state resistance r ds (on) ( ? ) transfer characteristics (typical) gate-source voltage v gs (v) drain current i d (a) forward transfer admittance vs. drain current (typical) drain current i d (a) forward transfer admittance ? y fs ? (s) switching characteristics (typical) drain-source voltage v ds (v) capacitance vs. drain-source voltage (typical) drain current i d (a) capacitance ciss, coss, crss (pf) switching time (ns) 0 4 8 12 16 20 048121620 0 4 8 12 16 20 048121620 0 0.2 0.4 0.6 0.8 1.0 10 C 1 2 10 0 357 2 10 1 357 2 10 2 357 10 1 10 0 23 57 72357 10 1 5 7 10 2 2 3 5 7 2 3 5 10 0 357 10 1 3 2 257 10 2 3 22 57 10 2 10 1 3 5 7 10 3 2 2 3 5 7 2 3 5 10 1 10 0 23 57 72357 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 2 3 v ds = 10v pulse test t c = 25 c pulse test t c = 25 c v ds = 10v pulse test tch = 25 c v gs = 10v v dd = 150v r gen = r gs = 50 ? t d(off) t d(on) t f t r ciss coss crss tch = 25 c v gs = 0v f = 1mhz t c = 25 c pulse test t c = 25 c,75 c,125 c v gs = 10v = 20v i d = 20a 5a 10a
mitsubishi nch power mosfet FS10UMA-5A high-speed switching use sep. 2001 gate-source voltage vs. gate charge (typical) gate charge q g (nc) gate-source voltage v gs (v) source-drain diode forward characteristics (typical) source-drain voltage v sd (v) source current i s (a) channel temperature tch ( c) drain-source on-state resistance r ds (on) (t c) threshold voltage vs. channel temperature (typical) gate-source threshold voltage v gs (th) (v) transient thermal impedance characteristics channel temperature tch ( c) breakdown voltage vs. channel temperature (typical) pulse width t w (s) transient thermal impedance z th (ch C c) ( c/ w) on-state resistance vs. channel temperature (typical) drain-source on-state resistance r ds (on) (25 c) channel temperature tch ( c) drain-source breakdown voltage v (br) dss (t c) drain-source breakdown voltage v (br) dss (25 c) 0.4 0.6 0.8 1.0 1.2 1.4 C 50 0 50 100 150 v gs = 0v i d = 1ma 0 1.0 2.0 3.0 4.0 5.0 C 50 0 50 100 150 v ds = 10v i d = 1ma 0 8 16 24 32 40 0 0.8 1.6 2.4 3.2 4.0 10 C 1 10 0 2 3 5 7 10 1 2 3 5 7 C 50 0 50 100 150 v gs = 10v i d = 5a pulse test 0 4 8 12 16 20 0 20406080100 10 C 2 10 C 1 2 3 5 7 10 0 2 3 5 7 10 1 2 3 5 7 10 C 4 23 57 23 57 23 57 23 57 10 0 23 57 10 1 23 57 10 2 10 C 3 10 C 2 10 C 1 v ds = 50v 100v 150v t c h = 25 c i d = 10a v gs = 0v pulse test t c = 25 c 75 c 125 c p dm tw d = t tw t d = 1.0 = 0.5 = 0.2 = 0.1 single pulse = 0.05 = 0.02 = 0.01
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